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| 40 10V 2.5V 30 4.5V 2V 20 Vds=5V 16 Id (A) 20 Id (A) 12 8 10 Vgs=1.5V 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 40 Vgs=1.8V 30 1.6 Vgs=2.5V,6A 4 125C 25C 0 0 0.5 1.5 2 2.5 Vgs (Volts) Figure 2: Transfer Characteristics 1 3 Normalized On-Resistance Rds(on) (m:) 1.4 Vgs=4.5V, 8A 20 Vgs=2.5V Vgs=4.5V 1.2 Vgs=1.8V, 4A Vgs=10V, 9.4A 10 Vgs=10V 0 0 5 10 15 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 40 1.0E+01 1.0E+00 30 Id=6A 1.0E-01 125C Rds(on) (m:) 20 125C Is (A) 1.0E-02 1.0E-03 1.0E-04 25C 10 25C 0 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Vsd (Volts) Figure 6: Body-Diode Characteristics 5 4 Vds=10V Id=9.4A 2800 2400 Capacitance (pF) 2000 Ciss 1600 1200 800 400 Coss Vgs (Volts) 3 2 1 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics Crss 0 0 5 10 15 20 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 10Ps 10.0 Rds(on) limited 100Ps 10ms 0.1s 1.0 Tj(max)=150C Ta=25C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 10s DC 40 Tj(max)=150C Ta=25C 30 Id (Amps) Power (W) 1ms 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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